FS33MR12W1M1HB70BPSA1 Infineon Technologies
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6207.20 грн |
| 10+ | 5656.48 грн |
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Технічний опис FS33MR12W1M1HB70BPSA1 Infineon Technologies
Description: EASY STANDARD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel, Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 25A, Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V, Rds On (Max) @ Id, Vgs: 48mOhm @ 25A, 18V, Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 10mA.
Інші пропозиції FS33MR12W1M1HB70BPSA1 за ціною від 6349.76 грн до 6349.76 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
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FS33MR12W1M1HB70BPSA1 | Infineon Technologies |
 Description: EASY STANDARDPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V Rds On (Max) @ Id, Vgs: 48mOhm @ 25A, 18V Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V Vgs(th) (Max) @ Id: 5.15V @ 10mA |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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| FS33MR12W1M1HB70BPSA1 |
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Виробник: Infineon Technologies
Description: EASY STANDARD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V
Rds On (Max) @ Id, Vgs: 48mOhm @ 25A, 18V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 10mA
Description: EASY STANDARD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V
Rds On (Max) @ Id, Vgs: 48mOhm @ 25A, 18V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 10mA
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6349.76 грн |