FS35R12KT3BOSA1 Infineon Technologies


Infineon-FS35R12KT3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b431421f53f3
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 55A 210W
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 210 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 55 A
Supplier Device Package: Module
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Технічний опис FS35R12KT3BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 55A 210W, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A, Operating Temperature: -40°C ~ 125°C, Configuration: Full Bridge Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray, Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 210 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 55 A, Supplier Device Package: Module.