FS450R12OE4BOSA1 Infineon Technologies
Виробник: Infineon TechnologiesTrans IGBT Module N-CH 1200V 660A 2250000mW Automotive 29-Pin ECONOPP-2 Tray
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис FS450R12OE4BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 660A 2250W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 660 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 2250 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 28 nF @ 25 V.
Інші пропозиції FS450R12OE4BOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
FS450R12OE4BOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 660A 2250W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 660 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2250 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
товар відсутній |