FS50R07N2E4_B11 Infineon Technologies

Description: IGBT MODULE, Package / Case: Module, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 190 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 70 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount.