FS75R06KE3BOSA1 INFINEON
Виробник: INFINEON
Description: INFINEON - FS75R06KE3BOSA1 - IGBT-Modul, Sechserpack [Vollbrücke], 75 A, 1.45 V, 250 W, 150 °C, Modul
tariffCode: 85412900
Transistormontage: Platte
rohsCompliant: YES
IGBT-Technologie: IGBT 3 [Trench/Feldstop]
Sperrschichttemperatur Tj, max.: 150°C
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.45V
usEccn: EAR99
IGBT-Anschluss: Lötanschluss
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45V
Verlustleistung Pd: 250W
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: Modul
Kollektor-Emitter-Spannung V(br)ceo: 600V
Dauerkollektorstrom: 75A
Produktpalette: EconoPACK 2
Kollektor-Emitter-Spannung, max.: 600V
IGBT-Konfiguration: Sechserpack [Vollbrücke]
productTraceability: Yes-Date/Lot Code
DC-Kollektorstrom: 75A
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (27-Jun-2018)
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Технічний опис FS75R06KE3BOSA1 INFINEON
Description: INFINEON - FS75R06KE3BOSA1 - IGBT-Modul, Sechserpack [Vollbrücke], 75 A, 1.45 V, 250 W, 150 °C, Modul, tariffCode: 85412900, Transistormontage: Platte, rohsCompliant: YES, IGBT-Technologie: IGBT 3 [Trench/Feldstop], Sperrschichttemperatur Tj, max.: 150°C, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Kollektor-Emitter-Sättigungsspannung: 1.45V, usEccn: EAR99, IGBT-Anschluss: Lötanschluss, Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45V, Verlustleistung Pd: 250W, euEccn: NLR, Verlustleistung: 250W, Bauform - Transistor: Modul, Kollektor-Emitter-Spannung V(br)ceo: 600V, Dauerkollektorstrom: 75A, Produktpalette: EconoPACK 2, Kollektor-Emitter-Spannung, max.: 600V, IGBT-Konfiguration: Sechserpack [Vollbrücke], productTraceability: Yes-Date/Lot Code, DC-Kollektorstrom: 75A, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (27-Jun-2018).
Інші пропозиції FS75R06KE3BOSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
FS75R06KE3BOSA1 | Infineon Technologies |
Description: IGBT MODULE 600V 75A 250WInput Capacitance (Cies) @ Vce: 4.6 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 250 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 75 A IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Operating Temperature: -40°C ~ 150°C Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. |
| FS75R06KE3BOSA1 | Infineon Technologies |
IGBT Modules LOW POWER ECONO |
товару немає в наявності |
В кошику од. на суму грн. |
| FS75R06KE3BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 75A 250W
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MODULE 600V 75A 250W
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| FS75R06KE3BOSA1 |
![]() |
Виробник: Infineon Technologies
IGBT Modules LOW POWER ECONO
IGBT Modules LOW POWER ECONO
товару немає в наявності
В кошику
од. на суму грн.



