FST160100 GeneSiC Semiconductor
Виробник: GeneSiC SemiconductorDescription: DIODE MODULE 100V 160A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 160 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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Технічний опис FST160100 GeneSiC Semiconductor
Description: DIODE MODULE 100V 160A TO249AB, Packaging: Bulk, Package / Case: TO-249AB, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 160A (DC), Supplier Device Package: TO-249AB, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 160 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Інші пропозиції FST160100
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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FST160100 | Виробник : Microsemi Corporation |
Description: DIODE MODULE 100V 80A TO249 Packaging: Bulk Package / Case: TO-249AA Isolated Base Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: TO-249 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A Current - Reverse Leakage @ Vr: 2 mA @ 100 V |
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FST160100 | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCTKY TO249AB 20-100V 160A100P/70 |
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