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Технічний опис FW217A-TL-2W ON Semiconductor
Description: MOSFET 2N-CH 35V 6A 8SOIC, Supplier Device Package: 8-SOIC, FET Feature: Logic Level Gate, 4.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 6A, Drain to Source Voltage (Vdss): 35V, Power - Max: 2.2W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції FW217A-TL-2W
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
FW217A-TL-2W | onsemi |
Description: MOSFET 2N-CH 35V 6A 8SOICSupplier Device Package: 8-SOIC FET Feature: Logic Level Gate, 4.5V Drive Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 35V Power - Max: 2.2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
FW217A-TL-2W | onsemi |
Description: MOSFET 2N-CH 35V 6A 8SOICSupplier Device Package: 8-SOIC FET Feature: Logic Level Gate, 4.5V Drive Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 35V Power - Max: 2.2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| FW217A-TL-2W |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 35V 6A 8SOIC
Supplier Device Package: 8-SOIC
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 35V
Power - Max: 2.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 35V 6A 8SOIC
Supplier Device Package: 8-SOIC
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 35V
Power - Max: 2.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FW217A-TL-2W |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 35V 6A 8SOIC
Supplier Device Package: 8-SOIC
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 35V
Power - Max: 2.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 35V 6A 8SOIC
Supplier Device Package: 8-SOIC
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 35V
Power - Max: 2.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.



