FW217A-TL-2W ONSEMI

Description: ONSEMI - FW217A-TL-2W - MOSFET, DUAL NCH, 35V, 6A, SOIC
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
на замовлення 9543 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
2500+ | 31.91 грн |
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Технічний опис FW217A-TL-2W ONSEMI
Description: MOSFET 2N-CH 35V 6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W, Drain to Source Voltage (Vdss): 35V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V, Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, 4.5V Drive, Supplier Device Package: 8-SOIC.
Інші пропозиції FW217A-TL-2W
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FW217A-TL-2W | Виробник : ON Semiconductor |
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на замовлення 3275 шт: термін постачання 21-30 дні (днів) |
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FW217A-TL-2W | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Supplier Device Package: 8-SOIC |
товару немає в наявності |
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FW217A-TL-2W | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Supplier Device Package: 8-SOIC |
товару немає в наявності |