FZ1200R33HE3BPSA1

FZ1200R33HE3BPSA1 Infineon Technologies


Infineon-FZ1200R33HE3-DS-v03_01-en_de.pdf?fileId=db3a304327b8975001283eeed2944021 Виробник: Infineon Technologies
Description: IGBT MODULE 3300V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 13000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 210 nF @ 25 V
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Технічний опис FZ1200R33HE3BPSA1 Infineon Technologies

Description: IGBT MODULE 3300V 1200A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 1200A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 1200 A, Voltage - Collector Emitter Breakdown (Max): 3300 V, Power - Max: 13000 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 210 nF @ 25 V.