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FZ1200R33KF2CS1NOSA1 Infineon Technologies


FZ1200R33KF2C_Rev2.1_11-25-13.pdf
Виробник: Infineon Technologies
Description: IGBT MODULE 3300V 2000A 14500W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 2000 A
Part Status: Obsolete
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1.2kA
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Current - Collector Cutoff (Max): 12 mA
Power - Max: 14500 W
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Технічний опис FZ1200R33KF2CS1NOSA1 Infineon Technologies

Description: IGBT MODULE 3300V 2000A 14500W, Voltage - Collector Emitter Breakdown (Max): 3300 V, Current - Collector (Ic) (Max): 2000 A, Part Status: Obsolete, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1.2kA, Operating Temperature: -40°C ~ 125°C, Configuration: Full Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray, Input Capacitance (Cies) @ Vce: 150 nF @ 25 V, Current - Collector Cutoff (Max): 12 mA, Power - Max: 14500 W.