FZ2400R12HE4PB9HPSA1 Infineon Technologies
Виробник: Infineon Technologies
IHM-Module with fast Trench/ Field stop IGBT4 and Emitter Controlled 4 diode and pre-applied Thermal Interface Material
IHM-Module with fast Trench/ Field stop IGBT4 and Emitter Controlled 4 diode and pre-applied Thermal Interface Material
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Технічний опис FZ2400R12HE4PB9HPSA1 Infineon Technologies
Description: IGBT MODULE 1200V 2400A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2400A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 2400 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 150 nF @ 25 V.
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Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FZ2400R12HE4PB9HPSA1 | Виробник : Infineon Technologies | IHM-Module with fast Trench/ Field stop IGBT4 and Emitter Controlled 4 diode and pre-applied Thermal Interface Material |
товар відсутній |
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FZ2400R12HE4PB9HPSA1 | Виробник : Infineon Technologies |
Description: IGBT MODULE 1200V 2400A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2400A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 2400 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 150 nF @ 25 V |
товар відсутній |
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FZ2400R12HE4PB9HPSA1 | Виробник : Infineon Technologies | IGBT Transistors PP IHM I |
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