FZ2400R12HP4B9NPSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 3550 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 62287.37 грн |
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Технічний опис FZ2400R12HP4B9NPSA1 Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Switch, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA, NTC Thermistor: No, Supplier Device Package: AG-IHMB190, IGBT Type: Trench, Part Status: Active, Current - Collector (Ic) (Max): 3550 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 13500 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 150 nF @ 25 V.