FZ2400R12HP4B9NPSA1 Infineon Technologies

Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 150 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 13500 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 3550 A, Part Status: Active, IGBT Type: Trench, Supplier Device Package: AG-IHMB190, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Single Switch, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module.