FZ400R12KS4HOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 510A 2500W MOD
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 510 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2500 W
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Технічний опис FZ400R12KS4HOSA1 Infineon Technologies
Description: IGBT MOD 1200V 510A 2500W MOD, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 510 A, Part Status: Active, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A, Operating Temperature: -40°C ~ 125°C, Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray, Input Capacitance (Cies) @ Vce: 26 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 2500 W.
Інші пропозиції FZ400R12KS4HOSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
FZ400R12KS4HOSA1 | Infineon Technologies |
IGBT Modules MEDIUM POWER 62MM |
товару немає в наявності |
В кошику од. на суму грн. |
| FZ400R12KS4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM Type of semiconductor module: IGBT Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Max. off-state voltage: 1.2kV Power dissipation: 2.5kW Semiconductor structure: single transistor |
товару немає в наявності |
В кошику од. на суму грн. |
| FZ400R12KS4HOSA1 |
|
Виробник: Infineon Technologies
IGBT Modules MEDIUM POWER 62MM
IGBT Modules MEDIUM POWER 62MM
товару немає в наявності
В кошику
од. на суму грн.
| FZ400R12KS4HOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Power dissipation: 2.5kW
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Power dissipation: 2.5kW
Semiconductor structure: single transistor
товару немає в наявності
В кошику
од. на суму грн.