G020N03K Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET,N-CH,30V,168A,140W,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6005 pF @ 15 V
на замовлення 794 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 104.97 грн |
| 10+ | 64.05 грн |
| 100+ | 42.54 грн |
| 500+ | 31.26 грн |
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Технічний опис G020N03K Goford Semiconductor
Description: MOSFET,N-CH,30V,168A,140W,TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 168A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6005 pF @ 15 V.
Інші пропозиції G020N03K
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G020N03K | Виробник : Goford Semiconductor |
Description: MOSFET,N-CH,30V,168A,140W,TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 168A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6005 pF @ 15 V |
товару немає в наявності |