G02P06 Goford Semiconductor
Виробник: Goford Semiconductor
Description: P60V,RD(MAX)<190M@-10V,RD(MAX)<2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.54 грн |
| 6000+ | 6.16 грн |
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Технічний опис G02P06 Goford Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; 1.5W; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -1.6A, Case: SOT23, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 11.3nC, Kind of channel: enhancement, Technology: Trench, Power dissipation: 1.5W.
Інші пропозиції G02P06 за ціною від 3.84 грн до 56.00 грн
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G02P06 | Goford Semiconductor |
Description: P60V,RD(MAX)<190M@-10V,RD(MAX)<2 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V |
на замовлення 124 шт: термін постачання 21-31 дні (днів) |
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G02P06 | GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; 1.5W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.6A Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Gate charge: 11.3nC Kind of channel: enhancement Technology: Trench Power dissipation: 1.5W |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| G02P06 |
|
Виробник: Goford Semiconductor
Description: P60V,RD(MAX)<190M@-10V,RD(MAX)<2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V
Description: P60V,RD(MAX)<190M@-10V,RD(MAX)<2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V
на замовлення 124 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 15+ | 20.23 грн |
| 100+ | 10.20 грн |
| G02P06 |
|
Виробник: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 11.3nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1.5W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 11.3nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1.5W
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 56.00 грн |
| 12+ | 37.40 грн |
| 25+ | 20.06 грн |
| 100+ | 8.70 грн |
| 500+ | 5.20 грн |
| 1000+ | 4.50 грн |
| 3000+ | 3.84 грн |