G05P06L Goford Semiconductor
Виробник: Goford Semiconductor
Description: P60V,RD(MAX)<120M@-10V,RD(MAX)<1
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1376 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.6W (Tc)
| Кількість | Ціна |
|---|---|
| 8+ | 39.99 грн |
| 13+ | 23.78 грн |
| 100+ | 15.12 грн |
| 500+ | 10.67 грн |
| 1000+ | 9.53 грн |
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Технічний опис G05P06L Goford Semiconductor
Description: P60V,RD(MAX).
Інші пропозиції G05P06L
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G05P06L | Виробник : Goford Semiconductor |
Description: P60V,RD(MAX)<120M@-10V,RD(MAX)<1 Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1376 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.6W (Tc) |
товару немає в наявності |