G09P02L Goford Semiconductor

Виробник: Goford Semiconductor
Description: P20V,RD(MAX)<23M@-4.5V,RD(MAX)<3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 2196 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Packaging: Cut Tape (CT)