G09P02L Goford Semiconductor
Виробник: Goford Semiconductor
Description: P20V,RD(MAX)<23M@-4.5V,RD(MAX)<3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 2196 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.32 грн |
| 14+ | 21.49 грн |
| 100+ | 14.53 грн |
| 500+ | 10.63 грн |
| 1000+ | 9.64 грн |
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Технічний опис G09P02L Goford Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -9A; 2.5W; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -9A, Case: SOT23, Gate-source voltage: ±12V, Mounting: SMD, Gate charge: 72nC, Kind of channel: enhancement, Technology: Trench, Power dissipation: 2.5W.
Інші пропозиції G09P02L за ціною від 6.96 грн до 52.68 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G09P02L | GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -9A; 2.5W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Case: SOT23 Gate-source voltage: ±12V Mounting: SMD Gate charge: 72nC Kind of channel: enhancement Technology: Trench Power dissipation: 2.5W |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
|
| G09P02L |
|
Виробник: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -9A; 2.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 2.5W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -9A; 2.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 2.5W
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.68 грн |
| 15+ | 29.52 грн |
| 25+ | 16.91 грн |
| 100+ | 10.20 грн |
| 500+ | 8.87 грн |
| 1000+ | 8.04 грн |
| 3000+ | 6.96 грн |