G1002L Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 2A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V
Power Dissipation (Max): 1.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
| Кількість | Ціна |
|---|---|
| 3000+ | 3.51 грн |
| 15000+ | 3.09 грн |
| 30000+ | 2.80 грн |
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Технічний опис G1002L Goford Semiconductor
Description: MOSFET N-CH 100V 2A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V, Power Dissipation (Max): 1.3W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Інші пропозиції G1002L за ціною від 8.50 грн до 36.07 грн
| Фото | Назва | Виробник | Інформація |
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G1002L | Виробник : Goford Semiconductor |
Description: N100V,RD(MAX)<250M@10V,VTH1.2V~2 Input Capacitance (Ciss) (Max) @ Vds: 413 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.3W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 2934 шт: термін постачання 21-31 дні (днів) |
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G1002L | Виробник : Goford Semiconductor |
Description: N100V,RD(MAX)<250M@10V,VTH1.2V~2 Input Capacitance (Ciss) (Max) @ Vds: 413 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.3W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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| G1002L | Виробник : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 2A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Gate charge: 10nC Kind of channel: enhancement Technology: Trench |
товару немає в наявності |