G1006LE Goford Semiconductor
Виробник: Goford Semiconductor
Description: N100V,RD(MAX)<150M@10V,RD(MAX)<1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 50 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.05 грн |
| 6000+ | 8.35 грн |
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Технічний опис G1006LE Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 3A; 1.5W; SOT23; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3A, Power dissipation: 1.5W, Case: SOT23, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 17nC, Kind of channel: enhancement, Version: ESD, Technology: Trench.
Інші пропозиції G1006LE за ціною від 8.88 грн до 33.32 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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G1006LE | Goford Semiconductor |
Description: N100V,RD(MAX)<150M@10V,RD(MAX)<1 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V FET Feature: Standard Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 50 V |
на замовлення 7277 шт: термін постачання 21-31 дні (днів) |
|
| G1006LE |
|
Виробник: Goford Semiconductor
Description: N100V,RD(MAX)<150M@10V,RD(MAX)<1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 50 V
Description: N100V,RD(MAX)<150M@10V,RD(MAX)<1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 50 V
на замовлення 7277 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.32 грн |
| 12+ | 25.07 грн |
| 100+ | 15.04 грн |
| 500+ | 13.06 грн |
| 1000+ | 8.88 грн |