G1006LE Goford Semiconductor
Виробник: Goford Semiconductor
Description: N100V,RD(MAX)<150M@10V,RD(MAX)<1
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.5W (Tc)
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 9.16 грн |
| 6000+ | 8.45 грн |
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Технічний опис G1006LE Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 3A; 1.5W; SOT23; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3A, Power dissipation: 1.5W, Case: SOT23, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 17nC, Kind of channel: enhancement, Version: ESD, Technology: Trench.
Інші пропозиції G1006LE за ціною від 8.99 грн до 33.72 грн
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G1006LE | Виробник : Goford Semiconductor |
Description: N100V,RD(MAX)<150M@10V,RD(MAX)<1 Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.5W (Tc) FET Feature: Standard Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 7277 шт: термін постачання 21-31 дні (днів) |
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| G1006LE | Виробник : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 3A; 1.5W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Gate charge: 17nC Kind of channel: enhancement Version: ESD Technology: Trench |
товару немає в наявності |