G120P03S2 Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET 30V 16A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 17.77 грн |
| 16000+ | 15.81 грн |
Відгуки про товар
Написати відгук
Технічний опис G120P03S2 Goford Semiconductor
Description: MOSFET 30V 16A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V, Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active.
Інші пропозиції G120P03S2 за ціною від 18.53 грн до 54.47 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
G120P03S2 | Виробник : Goford Semiconductor |
Description: MOSFET 30V 16A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
G120P03S2 | Виробник : Goford Semiconductor |
Description: MOSFET 30V 16A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| G120P03S2 | Виробник : GOFORD Semiconductor |
P-CH,-30V,-16A,RD(max) Less Than 14mOhm at -10V,RD(max) Less Than 18mOhm at -4.5V,VTH -1.0V to -2.5V,SOP-8 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|