G120P06T GOFORD Semiconductor
Виробник: GOFORD Semiconductor
P-CH,-60V,-120A,RD(max) Less Than 8.5mOhm at -10V,VTH -1.0V to -3.0V, TO-220
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Технічний опис G120P06T GOFORD Semiconductor
Category: THT P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -120A; 277W; TO220, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -120A, Power dissipation: 277W, Case: TO220, Gate-source voltage: ±20V, Mounting: THT, Gate charge: 230nC, Kind of channel: enhancement, Technology: Trench.
Інші пропозиції G120P06T
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| G120P06T | GOFORD SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -120A; 277W; TO220 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -120A Power dissipation: 277W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 230nC Kind of channel: enhancement Technology: Trench |
товару немає в наявності |
В кошику од. на суму грн. |
| G120P06T |
Виробник: GOFORD SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -120A; 277W; TO220
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Power dissipation: 277W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 230nC
Kind of channel: enhancement
Technology: Trench
Category: THT P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -120A; 277W; TO220
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Power dissipation: 277W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 230nC
Kind of channel: enhancement
Technology: Trench
товару немає в наявності
В кошику
од. на суму грн.