G12P03D3 Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET P-CH 30V 12A DFN3*3-8L
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 5000+ | 6.50 грн |
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Технічний опис G12P03D3 Goford Semiconductor
Description: MOSFET P-CH 30V 12A DFN3*3-8L, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN (3.15x3.05), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції G12P03D3 за ціною від 13.34 грн до 58.81 грн
| Фото | Назва | Виробник | Інформація |
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G12P03D3 | Виробник : Goford Semiconductor |
Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<26 Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN (3.15x3.05) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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G12P03D3 | Виробник : Goford Semiconductor |
Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<26 Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN (3.15x3.05) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 2433 шт: термін постачання 21-31 дні (днів) |
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