G12P10K Goford Semiconductor
Виробник: Goford Semiconductor
Description: P100V,RD(MAX)<200M@-10V,RD(MAX)<
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 57W
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 7+ | 50.18 грн |
| 10+ | 42.21 грн |
| 100+ | 29.23 грн |
| 500+ | 22.92 грн |
| 1000+ | 19.51 грн |
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Технічний опис G12P10K Goford Semiconductor
Description: P100V,RD(MAX).
Інші пропозиції G12P10K
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G12P10K | Виробник : Goford Semiconductor |
Description: P100V,RD(MAX)<200M@-10V,RD(MAX)< Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 57W Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
товару немає в наявності |