G12P10TE Goford Semiconductor

Виробник: Goford Semiconductor
Description: P-100V,-12A,RD(MAX)<200M@-10V,VT
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube