G130N06S Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET N-CH 60V 9A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 14.82 грн |
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Технічний опис G130N06S Goford Semiconductor
Description: MOSFET N-CH 60V 9A SOP-8, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Power Dissipation (Max): 2.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Інші пропозиції G130N06S за ціною від 18.81 грн до 78.62 грн
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G130N06S | Виробник : Goford Semiconductor |
Description: MOSFET, N-CH,60V,9A,RD(MAX)<12M@ Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 2.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3068 pF @ 30 V |
на замовлення 3990 шт: термін постачання 21-31 дні (днів) |
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G130N06S | Виробник : Goford Semiconductor |
Description: MOSFET, N-CH,60V,9A,RD(MAX)<12M@ Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 2.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3068 pF @ 30 V |
товару немає в наявності |
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| G130N06S | Виробник : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 9A; 2.6W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Power dissipation: 2.6W Case: SOP8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 67nC Kind of channel: enhancement Technology: Trench |
товару немає в наявності |