G130N06S2 Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
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Технічний опис G130N06S2 Goford Semiconductor
Description: MOSFET 2N-CH 60V 9A 8SOP, Packaging: Tape & Reel (TR), Part Status: Active, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.6W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V, Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP.
Інші пропозиції G130N06S2 за ціною від 32.64 грн до 117.79 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G130N06S2 | Goford Semiconductor |
Description: MOSFET 2N-CH 60V 9A 8SOP Packaging: Cut Tape (CT) Part Status: Active Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 3701 шт: термін постачання 21-31 дні (днів) |
|
| G130N06S2 |
|
Виробник: Goford Semiconductor
Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 3701 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.79 грн |
| 10+ | 72.08 грн |
| 100+ | 48.37 грн |
| 500+ | 35.85 грн |
| 1000+ | 32.78 грн |
| 2000+ | 32.64 грн |