G15N10C Goford Semiconductor
Виробник: Goford Semiconductor
Description: N100V,RD(MAX)<110M@10V,RD(MAX)<1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 6+ | 59.59 грн |
| 10+ | 36.09 грн |
| 100+ | 23.38 грн |
| 500+ | 16.80 грн |
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Технічний опис G15N10C Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 22A; 55W; TO252, Type of transistor: N-MOSFET, Technology: Trench, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 22A, Power dissipation: 55W, Case: TO252, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 22nC, Kind of channel: enhancement.
Інші пропозиції G15N10C
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G15N10C | Виробник : Goford Semiconductor |
Description: N100V,RD(MAX)<110M@10V,RD(MAX)<1 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 50 V |
товару немає в наявності |
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| G15N10C | Виробник : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 22A; 55W; TO252 Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Power dissipation: 55W Case: TO252 Gate-source voltage: ±20V Mounting: SMD Gate charge: 22nC Kind of channel: enhancement |
товару немає в наявності |