G160N04D32 Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET,DUAL N-CH,40V,21A,23W,8-D
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Технічний опис G160N04D32 Goford Semiconductor
Description: MOSFET,DUAL N-CH,40V,21A,23W,8-D, Supplier Device Package: 8-DFN (3.15x3.05), Vgs(th) (Max) @ Id: 2V @ 250µA, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції G160N04D32
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G160N04D32 | Виробник : Goford Semiconductor |
Description: MOSFET,DUAL N-CH,40V,21A,23W,8-D Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Supplier Device Package: 8-DFN (3.15x3.05) Vgs(th) (Max) @ Id: 2V @ 250µA |
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