G160N04S Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET,N-CH,40V,9A,2.5W,8-SOP
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
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Технічний опис G160N04S Goford Semiconductor
Description: MOSFET,N-CH,40V,9A,2.5W,8-SOP, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Tc), Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V.
Інші пропозиції G160N04S
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G160N04S | Виробник : Goford Semiconductor |
Description: MOSFET,N-CH,40V,9A,2.5W,8-SOP Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Tc) Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
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