G160P03KI Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET P-CH 30V 30A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
| Кількість | Ціна |
|---|---|
| 2500+ | 11.33 грн |
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Технічний опис G160P03KI Goford Semiconductor
Description: MOSFET P-CH 30V 30A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Інші пропозиції G160P03KI за ціною від 11.95 грн до 35.28 грн
| Фото | Назва | Виробник | Інформація |
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G160P03KI | Виробник : Goford Semiconductor |
Description: P-30V,-30A,RD(MAX)<16M@-10V,VTH-Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1811 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 31.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: P-Channel |
на замовлення 3963 шт: термін постачання 21-31 дні (днів) |
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| G160P03KI | Виробник : GOFORD |
P-Channel 30 V 30A (Tc) 60W (Tc) Surface Mount TO-252 Група товару: Транзистори Од. вим: шт |
товару немає в наявності |
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G160P03KI | Виробник : Goford Semiconductor |
Description: P-30V,-30A,RD(MAX)<16M@-10V,VTH-Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1811 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 31.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
