G160P03KI Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET P-CH 30V 30A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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Технічний опис G160P03KI Goford Semiconductor
Description: MOSFET P-CH 30V 30A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Інші пропозиції G160P03KI за ціною від 11.95 грн до 35.27 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G160P03KI | Goford Semiconductor |
Description: P-30V,-30A,RD(MAX)<16M@-10V,VTH- Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1811 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 31.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: P-Channel |
на замовлення 3963 шт: термін постачання 21-31 дні (днів) |
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| G160P03KI |
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Виробник: Goford Semiconductor
Description: P-30V,-30A,RD(MAX)<16M@-10V,VTH-
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1811 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Description: P-30V,-30A,RD(MAX)<16M@-10V,VTH-
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1811 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
на замовлення 3963 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.27 грн |
| 11+ | 28.91 грн |
| 100+ | 20.06 грн |
| 500+ | 14.70 грн |
| 1000+ | 11.95 грн |