G16P03D3 Goford Semiconductor
Виробник: Goford Semiconductor
Description: P30V,RD(MAX)<12M@-10V,RD(MAX)<18
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 15 V
| Кількість | Ціна |
|---|---|
| 5000+ | 15.91 грн |
Відгуки про товар
Написати відгук
Технічний опис G16P03D3 Goford Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -45A; 55W; DFN3x3-8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -45A, Power dissipation: 55W, Case: DFN3x3-8, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 35nC, Kind of channel: enhancement, Technology: Trench.
Інші пропозиції G16P03D3 за ціною від 11.04 грн до 57.39 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
G16P03D3 | Виробник : Goford Semiconductor |
Description: P30V,RD(MAX)<12M@-10V,RD(MAX)<18 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 15 V |
на замовлення 4433 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| G16P03D3 | Виробник : GOFORD Semiconductor |
P-CH -30V -16A 12mOhmMAX at -10V 18mOhmMAX at -4.5V DFN3x3-8L |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
| G16P03D3 | Виробник : GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -45A; 55W; DFN3x3-8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -45A Power dissipation: 55W Case: DFN3x3-8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 35nC Kind of channel: enhancement Technology: Trench |
товару немає в наявності |