G16P03D3 Goford Semiconductor
Виробник: Goford Semiconductor
Description: P30V,RD(MAX)<12M@-10V,RD(MAX)<18
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Технічний опис G16P03D3 Goford Semiconductor
P-CH -30V -16A 12mOhmMAX at -10V 18mOhmMAX at -4.5V DFN3x3-8L.
Інші пропозиції G16P03D3 за ціною від 12.04 грн до 56.44 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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G16P03D3 | Goford Semiconductor |
Description: P30V,RD(MAX)<12M@-10V,RD(MAX)<18 Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN (3.15x3.05) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 4433 шт: термін постачання 21-31 дні (днів) |
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| G16P03D3 | GOFORD Semiconductor |
P-CH -30V -16A 12mOhmMAX at -10V 18mOhmMAX at -4.5V DFN3x3-8L |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
|
| G16P03D3 |
|
Виробник: Goford Semiconductor
Description: P30V,RD(MAX)<12M@-10V,RD(MAX)<18
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: P30V,RD(MAX)<12M@-10V,RD(MAX)<18
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 4433 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.44 грн |
| 10+ | 36.56 грн |
| 100+ | 25.07 грн |
| 500+ | 18.63 грн |
| 1000+ | 17.01 грн |
| 2000+ | 15.64 грн |
| G16P03D3 |
|
Виробник: GOFORD Semiconductor
P-CH -30V -16A 12mOhmMAX at -10V 18mOhmMAX at -4.5V DFN3x3-8L
P-CH -30V -16A 12mOhmMAX at -10V 18mOhmMAX at -4.5V DFN3x3-8L
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 14.49 грн |
| 15000+ | 13.36 грн |
| 30000+ | 12.04 грн |