G170P02D2 Goford Semiconductor

Виробник: Goford Semiconductor
Description: P-20V,-16A,RD(MAX)<17M@-4.5V,VTH
Power Dissipation (Max): 18W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2179 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA