G170P02D2 Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET P-CH 20V 16A DFN2*2-6L
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.12 грн |
| 15000+ | 5.45 грн |
| 30000+ | 4.95 грн |
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Технічний опис G170P02D2 Goford Semiconductor
Description: MOSFET P-CH 20V 16A DFN2*2-6L, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V, FET Feature: Standard, Power Dissipation (Max): 18W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-DFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V.
Інші пропозиції G170P02D2 за ціною від 7.15 грн до 26.72 грн
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G170P02D2 | Виробник : Goford Semiconductor |
Description: P-20V,-16A,RD(MAX)<17M@-4.5V,VTH Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V FET Feature: Standard Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2179 pF @ 10 V |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
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G170P02D2 | Виробник : Goford Semiconductor |
Description: P-20V,-16A,RD(MAX)<17M@-4.5V,VTH Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V FET Feature: Standard Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2179 pF @ 10 V |
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