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G170P03D3

G170P03D3 Goford Semiconductor

G170P03D3.pdf
Виробник: Goford Semiconductor
Description: P-30V, -20A,RD<18M@-10V,VTH-1V~-
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 4949 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+57.22 грн
10+34.12 грн
50+24.95 грн
100+20.64 грн
500+15.75 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
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Технічний опис G170P03D3 Goford Semiconductor

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -30A; 35W; DFN3x3-8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -30A, Power dissipation: 35W, Case: DFN3x3-8, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 35nC, Kind of channel: enhancement, Technology: Trench.

Інші пропозиції G170P03D3

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
G170P03D3 G170P03D3 Goford Semiconductor G170P03D3.pdf Description: P-30V, -20A,RD<18M@-10V,VTH-1V~-
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
G170P03D3 GOFORD SEMICONDUCTOR G170P03D3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -30A; 35W; DFN3x3-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Power dissipation: 35W
Case: DFN3x3-8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhancement
Technology: Trench
товару немає в наявності
В кошику  од. на суму  грн.
G170P03D3 G170P03D3.pdf
G170P03D3
Виробник: Goford Semiconductor
Description: P-30V, -20A,RD<18M@-10V,VTH-1V~-
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
G170P03D3 G170P03D3.pdf
Виробник: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -30A; 35W; DFN3x3-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Power dissipation: 35W
Case: DFN3x3-8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhancement
Technology: Trench
товару немає в наявності
В кошику  од. на суму  грн.