G1K1P06LL Goford Semiconductor
Виробник: Goford Semiconductor
Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
| Кількість | Ціна |
|---|---|
| 10+ | 31.36 грн |
| 17+ | 18.73 грн |
| 100+ | 11.83 грн |
| 500+ | 8.28 грн |
| 1000+ | 7.37 грн |
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Технічний опис G1K1P06LL Goford Semiconductor
Description: P-60V,-4A,RD(MAX).
Інші пропозиції G1K1P06LL
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G1K1P06LL | Виробник : Goford Semiconductor |
Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH- Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-6L Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |