G1K3N10G Goford Semiconductor
Виробник: Goford Semiconductor
Description: N100V, 5A,RD<130M@10V,VTH1V~2V,
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.36 грн |
| 10+ | 89.54 грн |
| 100+ | 71.26 грн |
| 500+ | 56.59 грн |
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Технічний опис G1K3N10G Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 5A; 1.6W; SOT89, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 5A, Power dissipation: 1.6W, Case: SOT89, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 19nC, Kind of channel: enhancement, Technology: Trench.
Інші пропозиції G1K3N10G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
G1K3N10G | Goford Semiconductor |
Description: N100V, 5A,RD<130M@10V,VTH1V~2V, Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Packaging: Tape & Reel (TR) Supplier Device Package: SOT-89 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| G1K3N10G | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 5A; 1.6W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Power dissipation: 1.6W Case: SOT89 Gate-source voltage: ±20V Mounting: SMD Gate charge: 19nC Kind of channel: enhancement Technology: Trench |
товару немає в наявності |
В кошику од. на суму грн. |
| G1K3N10G |
|
Виробник: Goford Semiconductor
Description: N100V, 5A,RD<130M@10V,VTH1V~2V,
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-89
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: N100V, 5A,RD<130M@10V,VTH1V~2V,
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-89
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| G1K3N10G |
|
Виробник: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 5A; 1.6W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 1.6W
Case: SOT89
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Technology: Trench
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 5A; 1.6W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 1.6W
Case: SOT89
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Technology: Trench
товару немає в наявності
В кошику
од. на суму грн.