G1M Yangzhou Yangjie Electronic Technology Co.,Ltd
Виробник: Yangzhou Yangjie Electronic Technology Co.,LtdDescription: DIODE GEN PURP 1KV 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 10.83 грн |
| 30+ | 9.39 грн |
| 100+ | 5.12 грн |
| 500+ | 2.96 грн |
| 1000+ | 2.02 грн |
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Технічний опис G1M Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 1A SOD123FL, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123FL, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
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G1M | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1KV 1A SOD123FL Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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