G200P04D3 Goford Semiconductor
Виробник: Goford Semiconductor
Description: P-40V,-20A,RD(MAX)<75M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ -5A, -10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2662 pF @ 20 V
| Кількість | Ціна |
|---|---|
| 5000+ | 12.49 грн |
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Технічний опис G200P04D3 Goford Semiconductor
Description: P-40V,-20A,RD(MAX).
Інші пропозиції G200P04D3
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G200P04D3 | Виробник : Goford Semiconductor |
Description: P-40V,-20A,RD(MAX)<75M@-10V,VTH- Input Capacitance (Ciss) (Max) @ Vds: 2662 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN (3.15x3.05) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ -5A, -10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
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