G20P06K Goford Semiconductor

Виробник: Goford Semiconductor
Description: P-60V, -20A,RD<45M@-10V,VTH-2V~-
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3.5V @ 250µA
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)