G220P03S2 Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET P+P-CH 30V 9A SOP-8L DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 3935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 45.25 грн |
| 10+ | 37.23 грн |
| 100+ | 25.86 грн |
| 500+ | 18.95 грн |
| 1000+ | 15.40 грн |
| 2000+ | 13.77 грн |
Відгуки про товар
Написати відгук
Технічний опис G220P03S2 Goford Semiconductor
Description: MOSFET P+P-CH 30V 9A SOP-8L DUAL, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.7W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V, Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOP.
Інші пропозиції G220P03S2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
G220P03S2 | Виробник : Goford Semiconductor |
Description: MOSFET P+P-CH 30V 9A SOP-8L DUAL Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |