Технічний опис G230P06D5 Goford Semiconductor
Description: MOSFET P-CH 60V 48A DFN5*6-8L, Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-DFN (4.9x5.75), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 105W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції G230P06D5 за ціною від 24.30 грн до 99.19 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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G230P06D5 | Goford Semiconductor |
 Description: MOSFET P-CH 60V 48A DFN5*6-8LInput Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-DFN (4.9x5.75) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 105W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 3324 шт: термін постачання 21-31 дні (днів) |
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| G230P06D5 |
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Виробник: Goford Semiconductor
Description: MOSFET P-CH 60V 48A DFN5*6-8L
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 48A DFN5*6-8L
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 3324 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.19 грн |
| 10+ | 60.07 грн |
| 100+ | 39.77 грн |
| 500+ | 29.15 грн |
| 1000+ | 26.51 грн |
| 2000+ | 24.30 грн |