G230P06M Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET P-CH 60V 48A 105W TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4505 pF @ 30 V
| Кількість | Ціна |
|---|---|
| 4+ | 93.31 грн |
| 10+ | 60.40 грн |
| 100+ | 42.09 грн |
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Технічний опис G230P06M Goford Semiconductor
Description: MOSFET P-CH 60V 48A 105W TO-263, Input Capacitance (Ciss) (Max) @ Vds: 4505 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 105W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції G230P06M за ціною від 24.67 грн до 24.67 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||
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| G230P06M | Виробник : Goford Semiconductor |
Description: MOSFET P-CH 60V 48A 105W TO-263 Input Capacitance (Ciss) (Max) @ Vds: 4505 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 105W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
на замовлення 3200 шт: термін постачання 21-31 дні (днів) |
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G230P06M | Виробник : Goford Semiconductor |
Description: MOSFET P-CH 60V 48A 105W TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4505 pF @ 30 V |
товару немає в наявності |