G2312 Goford Semiconductor
Виробник: Goford Semiconductor
Description: N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.12 грн |
| 19+ | 16.27 грн |
| 100+ | 10.22 грн |
| 500+ | 7.12 грн |
| 1000+ | 6.32 грн |
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Технічний опис G2312 Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 5A, Case: SOT23, Gate-source voltage: ±12V, Mounting: SMD, Gate charge: 10.5nC, Kind of channel: enhancement, Technology: Trench, Power dissipation: 1.25W.
Інші пропозиції G2312 за ціною від 3.60 грн до 52.68 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G2312 | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Case: SOT23 Gate-source voltage: ±12V Mounting: SMD Gate charge: 10.5nC Kind of channel: enhancement Technology: Trench Power dissipation: 1.25W |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
|
| G2312 |
|
Виробник: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1.25W
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.68 грн |
| 12+ | 35.07 грн |
| 25+ | 18.80 грн |
| 100+ | 8.10 грн |
| 500+ | 4.88 грн |
| 1000+ | 4.20 грн |
| 3000+ | 3.60 грн |