G2SB60-E3D/P Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE BRIDGE
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tape & Reel (TR)
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Технічний опис G2SB60-E3D/P Vishay General Semiconductor - Diodes Division
Description: DIODE BRIDGE, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA, Current - Average Rectified (Io): 1.5 A, Voltage - Peak Reverse (Max): 600 V, Part Status: Obsolete, Supplier Device Package: GBL, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, GBL, Packaging: Tape & Reel (TR).
Інші пропозиції G2SB60-E3D/P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| G2SB60-E3D/P | Виробник : Vishay General Semiconductor | Vishay |
товару немає в наявності |