G300P06S Goford Semiconductor
Виробник: Goford Semiconductor
Description: P-CH,-60V,-12A,RD(MAX)<30M@-10V,
Input Capacitance (Ciss) (Max) @ Vds: 2719 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 5+ | 70.57 грн |
| 10+ | 42.74 грн |
| 100+ | 27.80 грн |
| 500+ | 20.07 грн |
| 1000+ | 18.13 грн |
| 2000+ | 16.49 грн |
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Технічний опис G300P06S Goford Semiconductor
Description: P-CH,-60V,-12A,RD(MAX).
Інші пропозиції G300P06S
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G300P06S | Виробник : Goford Semiconductor |
Description: P-CH,-60V,-12A,RD(MAX)<30M@-10V, Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2719 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-SOP |
товару немає в наявності |