G30N02T Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET N-CH 20V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
| Кількість | Ціна |
|---|---|
| 2000+ | 14.73 грн |
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Технічний опис G30N02T Goford Semiconductor
Description: MOSFET N-CH 20V 30A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 4.5V, FET Feature: Standard, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V.
Інші пропозиції G30N02T
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G30N02T | Виробник : Goford Semiconductor |
Description: N20V,RD(MAX)<13M@4.5V,VTH0.5V~1. Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 40W (Tc) FET Feature: Standard Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 4.5V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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