G33N03D3 Goford Semiconductor
Виробник: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 11.84 грн |
| 15000+ | 10.49 грн |
| 30000+ | 9.43 грн |
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Технічний опис G33N03D3 Goford Semiconductor
Description: N30V,RD(MAX).
Інші пропозиції G33N03D3 за ціною від 20.90 грн до 61.14 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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G33N03D3 | Goford Semiconductor |
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M Supplier Device Package: 8-DFN (3x3) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 18.5W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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G33N03D3 | Goford Semiconductor |
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M Power - Max: 18.5W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Supplier Device Package: 8-DFN (3x3) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 30V |
на замовлення 107329 шт: термін постачання 21-31 дні (днів) |
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| G33N03D3 |
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Виробник: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 18.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 18.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 21.91 грн |
| G33N03D3 |
|
Виробник: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Power - Max: 18.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Power - Max: 18.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
на замовлення 107329 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.14 грн |
| 10+ | 50.80 грн |
| 100+ | 35.17 грн |
| 500+ | 27.57 грн |
| 1000+ | 23.47 грн |
| 2000+ | 20.90 грн |