G33N03D52 Goford Semiconductor
Виробник: Goford Semiconductor
Description: N30V, 33A,RD<13M@10V,VTH1V~3V, D
Packaging: Tape & Reel (TR)
Package / Case: DFN5*6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 16A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN5*6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 15 V
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Технічний опис G33N03D52 Goford Semiconductor
Description: N30V, 33A,RD.
Інші пропозиції G33N03D52 за ціною від 17.64 грн до 51.73 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G33N03D52 | Goford Semiconductor |
Description: N30V, 33A,RD<13M@10V,VTH1V~3V, D Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN5*6 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DFN5*6 Packaging: Cut Tape (CT) |
на замовлення 9980 шт: термін постачання 21-31 дні (днів) |
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| G33N03D52 |
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Виробник: Goford Semiconductor
Description: N30V, 33A,RD<13M@10V,VTH1V~3V, D
Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5*6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DFN5*6
Packaging: Cut Tape (CT)
Description: N30V, 33A,RD<13M@10V,VTH1V~3V, D
Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5*6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DFN5*6
Packaging: Cut Tape (CT)
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.73 грн |
| 10+ | 42.87 грн |
| 100+ | 29.67 грн |
| 500+ | 23.27 грн |
| 1000+ | 19.80 грн |
| 2000+ | 17.64 грн |