G3401L Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET P-CH 30V 4.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 1.3W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
| Кількість | Ціна |
|---|---|
| 3000+ | 3.33 грн |
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Технічний опис G3401L Goford Semiconductor
Description: MOSFET P-CH 30V 4.4A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V, Power Dissipation (Max): 1.3W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V.
Інші пропозиції G3401L за ціною від 4.30 грн до 29.02 грн
| Фото | Назва | Виробник | Інформація |
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G3401L | Виробник : Goford Semiconductor |
Description: P30V,RD(MAX)<60M@-10V,RD(MAX)<70 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V Power Dissipation (Max): 1.3W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 15 V |
на замовлення 1533 шт: термін постачання 21-31 дні (днів) |
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| G3401L | Виробник : GOFORD Semiconductor |
P-CH 30V -4.2A 60mOhm/MAX at -10V,70mOhm/MAX at -4.5V SOT-23-3L |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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G3401L | Виробник : Goford Semiconductor |
Description: P30V,RD(MAX)<60M@-10V,RD(MAX)<70 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V Power Dissipation (Max): 1.3W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 15 V |
товару немає в наявності |
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| G3401L | Виробник : GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.4A; 1.3W; SOT23 Technology: Trench Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.4A Gate charge: 9.3nC Power dissipation: 1.3W Gate-source voltage: ±12V |
товару немає в наявності |