G350P02LLE Goford Semiconductor

Description: MOSFET P-CH 20V 4.5A SOT-23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, FET Feature: Standard, Power Dissipation (Max): 1.4W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-6L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1126 pF @ 10 V.