G3F25MT12J-TR GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: 1200V 25M TO-263-7 G3F SIC MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 34A, 18V
Power Dissipation (Max): 362W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 24mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3325 pF @ 800 V
Qualification: AEC-Q101
Description: 1200V 25M TO-263-7 G3F SIC MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 34A, 18V
Power Dissipation (Max): 362W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 24mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3325 pF @ 800 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 857.06 грн |
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Технічний опис G3F25MT12J-TR GeneSiC Semiconductor
Description: 1200V 25M TO-263-7 G3F SIC MOSFE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 87A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 34A, 18V, Power Dissipation (Max): 362W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 24mA, Supplier Device Package: TO-263-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3325 pF @ 800 V, Qualification: AEC-Q101.
Інші пропозиції G3F25MT12J-TR за ціною від 818.08 грн до 1518.40 грн
| Фото | Назва | Виробник | Інформація |
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G3F25MT12J-TR | Виробник : GeneSiC Semiconductor | SiC MOSFETs 1200V 25mohm TO-263-7 G3F SiC MOSFET |
на замовлення 1595 шт: термін постачання 21-30 дні (днів) |
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G3F25MT12J-TR | Виробник : GeneSiC Semiconductor |
Description: 1200V 25M TO-263-7 G3F SIC MOSFE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3325 pF @ 800 V Qualification: AEC-Q101 Rds On (Max) @ Id, Vgs: 34mOhm @ 34A, 18V Power Dissipation (Max): 362W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 24mA |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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