G3R160MT12J-TR GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: 1200V 160M TO-263-7 G3R SIC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
| Кількість | Ціна |
|---|---|
| 800+ | 369.78 грн |
| 1600+ | 344.32 грн |
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Технічний опис G3R160MT12J-TR GeneSiC Semiconductor
Description: 1200V 160M TO-263-7 G3R SIC MOSF, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 18V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 5mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V.
Інші пропозиції G3R160MT12J-TR за ціною від 316.32 грн до 508.34 грн
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G3R160MT12J-TR | GeneSiC Semiconductor |
Description: 1200V 160M TO-263-7 G3R SIC MOSF Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 18V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 5mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V |
на замовлення 2260 шт: термін постачання 21-31 дні (днів) |
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G3R160MT12J-TR | GeneSiC Semiconductor |
SiC MOSFETs 1200V 160mohm TO-263-7 G3R SiC MOSFET |
на замовлення 1084 шт: термін постачання 21-30 дні (днів) |
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| G3R160MT12J-TR |
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Виробник: GeneSiC Semiconductor
Description: 1200V 160M TO-263-7 G3R SIC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
Description: 1200V 160M TO-263-7 G3R SIC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
на замовлення 2260 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 492.55 грн |
| 10+ | 425.97 грн |
| 25+ | 408.34 грн |
| 100+ | 374.22 грн |
| G3R160MT12J-TR |
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Виробник: GeneSiC Semiconductor
SiC MOSFETs 1200V 160mohm TO-263-7 G3R SiC MOSFET
SiC MOSFETs 1200V 160mohm TO-263-7 G3R SiC MOSFET
на замовлення 1084 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 508.34 грн |
| 10+ | 450.49 грн |
| 25+ | 375.67 грн |
| 100+ | 351.93 грн |
| 250+ | 337.27 грн |
| 500+ | 326.79 грн |
| 800+ | 316.32 грн |